发明名称 |
METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE |
摘要 |
A novel method is presented to provide ASICs with drastically reduced NRE and with volume flexibility. The invention includes a method of fabricating an integrated circuit, including the steps of: providing a semiconductor substrate, forming a borderless logic array including a plurality of Area I/Os and also including the step of forming redistribution layer for redistribution at least some of the Area I/Os for the purpose of the device packaging. The fabrication may utilize Direct Write e-Beam for customization. The customization step may include fabricating various types of devices at different volume from the same wafer. |
申请公布号 |
KR20050111310(A) |
申请公布日期 |
2005.11.24 |
申请号 |
KR20057011471 |
申请日期 |
2005.06.17 |
申请人 |
EASIC CORPORATION |
发明人 |
OR BACH ZVI;COOKE LAURENCE;APOSTOL ADRIAN;IACOBUT ROMEO |
分类号 |
H01L;H01L21/44;H01L21/60;H01L23/31;H01L23/34;H01L23/485;H01L27/10;H01L27/118 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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