| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon support for heat treatment in which outward diffusion of metallic impurities and adhesion during heat treatment can be prevented. SOLUTION: A silicon block is cut into a supporting plate and then the supporting plate is flattened by lapping (#1200). It is then immersed into NaOH solution of 48% concentration at 80°C for 1 min and subjected to alkali etching. Subsequently, it is cleaned with pure water and immersed into mixture liquid of hydrofluoric acid and nitric acid (hydrofluoric acid: nitric acid: pure ware=1:6:9) for 1 min and subjected to acid etching. Thereafter, it is cleaned with pure water and subjected to SC-1 cleaning. COPYRIGHT: (C)2006,JPO&NCIPI |
