发明名称 Step gate electrode structures for field-effect transistors and methods for fabricating the same
摘要 A method is disclosed for forming at least two semiconductor devices with different gate electrode thicknesses. After forming a gate dielectric region, and determining whether a first or second device formed on the gate dielectric region expects a relatively faster gate dopant diffusion rate, a gate electrode layer is formed on the gate dielectric region wherein the gate electrode layer has a step-structure in which a portion thereof for the first device has a relatively larger thickness than that for the second device if the first device has a relatively faster gate dopant diffusion rate.
申请公布号 US2005260815(A1) 申请公布日期 2005.11.24
申请号 US20040851872 申请日期 2004.05.21
申请人 LIAW JHON J 发明人 LIAW JHON J.
分类号 H01L21/28;H01L21/8234;H01L21/8238;H01L29/04;H01L29/10;H01L29/772;H01L31/036;H01L31/0376;H01L31/20;(IPC1-7):H01L29/04;H01L21/823;H01L31/037 主分类号 H01L21/28
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