发明名称 |
Multi-bit magnetic random access memory device |
摘要 |
A multi-bit magnetic random access memory device and a method for writing to and sensing the multi-bit magnetic random access memory device. The magnetic memory includes a memory cell with a multilayer structure having a plurality of data layers which can each store one bit. The structure includes a plurality of magnetically changeable ferromagnetic layers, a ferromagnetic reference layer having a fixed magnetization state, a first spacer layer separating the magnetically changeable ferromagnetic layers, and a second spacer layer separating the ferromagnetic reference layer from the magnetically changeable ferromagnetic layers. This structure allows for more than one-bit to be stored as well as for efficient writing and reduced power consumption.
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申请公布号 |
US2005259463(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20050117352 |
申请日期 |
2005.04.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM CHEE-KHENG |
分类号 |
G11C11/15;G11C11/16;G11C11/56;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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