Semiconductor light emitting device and optical disc apparatus using the same

摘要

AlGaInP system laser device ( 24 ) and AlGaAs system laser device ( 26 ) are arranged so that respective stripes ( 28, 30 ) are parallel to each other. The AlGaInP system laser device ( 24 ) is placed to (011) plane ( 22 b) side from the centerline of the substrate and the AlGaAs system laser device ( 26 ) is placed to the (0{overscore (1{overscore (1) plane ( 22 a) side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1) ( 22 c) side of laser light. Substrate ( 22 ) is an off substrate and inclines from the (0{overscore (1{overscore (1) plane ( 22 a) toward the (011) plane ( 22 b) with respect to the (100) plane at a certain angle (theta off) within the range of 2 degrees and 15 degrees. Optical axis L₁ of the AlGaInP system laser device ( 24 ) is parallel to optical axis L₂ of the AlGaAs system laser device ( 26 ) and approaches at an angle of about 0.5 degrees.