SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a method for manufacturing a semiconductor device comprising a step for forming an Ni film (66) on a source/drain diffusion layer (64); a first heat treatment step wherein a heat treatment is conducted for reacting the lower portion of the Ni film (66) with the upper portion of the source/drain diffusion layer (64), thereby forming an Ni2Si film (70b) on the source/drain diffusion layer (64); a step for selectively etching and removing the unreacted portion of the Ni film (66); and a second heat treatment step wherein a heat treatment is conducted for further reacting the Ni2Si film (70b) with the upper portion of the source/drain diffusion layer (64).