发明名称 Speicherschaltung mit DMA Prüfung und sein Prüfverfahren
摘要 A memory device includes N pipe line blocks (12,22) for inputting N memory blocks (10,20) and a plurality of data outputs from each of the memory blocks to sequentially output the input data, where N is a natural number, and connects an output line of a ith pipe line block to an input line of a (i + 1)th pipe line block. such that if the device enters a direct access test mode, data sequentially output from an ith pipe line block is input to an (i + 1)th pipe line block, where 1 is a natural number smaller than N. Accordingly, data latched in N pipe line blocks are output using one data output pin, to thereby reduce the number of data output pins used for a direct access mode test to 1/N. <IMAGE>
申请公布号 DE69831918(D1) 申请公布日期 2005.11.24
申请号 DE1998631918 申请日期 1998.05.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHAI, JOON-WAN;KYUNG, KYE-HYUN
分类号 G01R31/28;G01R31/26;G11C11/401;G11C29/00;G11C29/32;G11C29/48;(IPC1-7):G11C29/00 主分类号 G01R31/28
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