NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE SEMICONDUCTOR ELEMENT AND THOSE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide the growing method of a nitride semiconductor, reduced in strain and low in dislocation density across the whole surface of a wafer.

SOLUTION: The first nitride semiconductor 14 is grown so that more than substantially half of dislocations generated selectively from a plurality of specified regions B periodically arranged on the surface of a different kind substrate 10 are advanced into a lateral direction parallel to the surface of the different kind substrate 10, in the specified regions B to grow a second nitride semiconductor 16 having a composition same as or different from the first nitride semiconductor 14 and cover the substantially whole surface of the different kind substrate 10. The nitride semiconductor is obtained with the dislocation density in the surface of less than 107cm-2across the substantially whole surface of the same.

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