| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, in which when a negative surge voltage is input, the potential variations of adjacent input terminals are suppressed and a circuit operation can be stabilized. SOLUTION: Adjacent to the surface layer of a p-type semiconductor substrate 1, n-type cathode areas 3, 4 are formed, and cathode electrodes 8, 9 are formed on the n-type cathode regions 3, 4. A back electrode 11 as a common electrode is formed on the back of the p-type semiconductor substrate 1, and p-n junction vertical Zener diodes are constituted by the n-type cathode regions 3, 4 and the p-type semiconductor substrate 1, respectively, and the p-type semiconductor substrate 1 is formed as a p-type anode region. An n-type diffused region 5 is formed apart from the n-type cathode region 3, 4, respectively, so as to surround the n-type cathode region 3, 4 individually. A p-type diffused region 6 is formed between the n-type diffused region 5 so as to come into contact with the n-type diffused area 5, and a metal electrode 10 is formed on the p-type diffused region 6 and the n-type diffused region 5 and is connected to a ground GND. By so doing, the operation of a circuit connected to the adjacent cathode electrode 9 is stabilized. COPYRIGHT: (C)2006,JPO&NCIPI
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