| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition method with improved productivity for forming a low dielectric constant insulation film excellent in light transmittance and adhesion. SOLUTION: The deposition method includes a step of forming an insulation layer with a dielectric constantεof 2.7≤ε≤3.5 for a vacuum and a refractive index n of 1.40<n<1.44 for the air on a substrate, by a plasma CVD method employing a mixed gas containing at least one kind each of organic silane-based gas, oxygen application gas and dilution gas with a predetermined ratio; and a subsequent step of forming a protective layer with a dielectric constantεof 3.8≤ε≤4.3 for a vacuum and a refractive index n of 1.42<n<1.48 for the air on the insulation layer, by the plasma CVD method employing a mixed gas of the same gas base but with a different gas composition ratio. COPYRIGHT: (C)2006,JPO&NCIPI
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