MOS TRANSISTOR FOR FABRICATING THE SAME,申请号KR20040035609-传众专利搜索

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发明名称	MOS TRANSISTOR FOR FABRICATING THE SAME
摘要
申请公布号	KR20050110789(A)	申请公布日期	2005.11.24
申请号	KR20040035609	申请日期	2004.05.19
申请人	DONGBUANAM SEMICONDUCTOR INC.	发明人	JUNG, JIN HYO
分类号	H01L21/336;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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