| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dielectric ceramic composition for an electronic device where a temperature coefficient τf can be controlled, in particular to a negative direction, while keeping a high Qf value and a dielectric constant and where a sintering time can be shortened. <P>SOLUTION: A traditional composition whose compositional formula is denoted as XBa(Mg<SB>1/3</SB>Ta<SB>2/3</SB>)O<SB>3</SB>-Y(Ba<SB>z</SB>Sr<SB>1-z</SB>)(Ga<SB>1/2</SB>Ta<SB>1/2</SB>)O<SB>3</SB>becomes a specific composition by substituting Mg with Ni and then the temperature coefficient τf can be controlled in the range between 0.80 and -4.45 ppm/°C by shifting τf to the negative direction while keeping the high Qf value and the dielectric constant. Even if the sintering time requiring about 50 hours conventionally is shortened to 25 hours, an equivalent Qf value is obtained. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
