| 摘要 |
PROBLEM TO BE SOLVED: To control short channel effect while reducing chip area. SOLUTION: A semiconductor device is provided with a semiconductor substrate 11 which has a first region, a second region, and a third region; a first gate insulating film 13a formed on the semiconductor substrate 11 of the first region; a first electrode layer 14a formed on the first gate insulating film 13a; a first silicide layer 15a formed on the first electrode layer 14a; a first cap layer 16a formed on the first silicide layer 15a, a second gate insulating film 13b formed on the semiconductor substrate 11 of the second region; a second electrode layer 14b formed on the second gate insulating film 13b; a second silicide layer 15b formed on the second electrode layer 14b; and a second cap layer 16b which is formed on the second silicide layer 15b and thinner than the first cap layer 16a. COPYRIGHT: (C)2006,JPO&NCIPI
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