SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor laser element having good temperature characteristics and oscillating in 650 nm wavelength band. SOLUTION: In the semiconductor laser element where an active layer and a clad layer are composed of an AlGaInP based material, a clad layer arranged on the p side has such a structure as a nondoped layer 51, a p-type first doped layer 52, a tensile strain layer 531 for suppressing diffusion of impurities into the active layer, and a p-type second doped layer 54 are formed in layers sequentially from the active layer side. Impurity concentration of the p-type first doped layer 52 is set lower than that of the p-type second doped layer 54. Preferably, impurity concentration of the p-type first doped layer 52 is set in the range of 5×1016cm-3to 3×1017cm-3. Element resistance is decreased by making the nondoped layer thin and threshold current is prevented from increasing by suppressing heat generation. COPYRIGHT: (C)2006,JPO&NCIPI