| 摘要 |
PROBLEM TO BE SOLVED: To realize a dual gate transistor including two gate electrodes having different thresholds without increasing a processing load compared with conventional manufacturing methods by forming a source, a drain, and a first gate electrode with a capping layer, and further forming a second gate electrode with a metal gate electrode by making use of an oblique deposition method. SOLUTION: The semiconductor device includes a channel layer 12, a Schottky barrier layer 13, and a capping layer 14 laminated in sequence on a substrate 10. In the semiconductor device, a source 15 and a drain 16 are formed in an electrically isolated manner using the capping layer 14, and a first gate electrode 17 electrically isolated from the source 15 and the drain 16 is formed between the source 15 and the drain 16. Further, there is formed a second gate electrode 18 between the source 15 and the gate electrode 17. The second gate electrode is electrically isolated from the source 15 and the first gate electrode 17, and is embedded partly in an upper portion of the Schottky barrier layer 13. COPYRIGHT: (C)2006,JPO&NCIPI
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