SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser device that is high in reliability and output and can prevent the deteriorated beam shape of a laser beam while suppressing an increase in local temperature adjacent to the end face of a resonator (between the end face of the resonator and a current implantation area). SOLUTION: When a nitride gallium-based semiconductor laser device is mounted to a submount as a heatsink, the projection length of the laser outgoing surface of the laser device against the end face of the heatsink is taken as L1, and a length of a current non-injection area in the direction of a resonator is taken as L3. In this case, the relationship of L3≥L1≥0 is assumed. COPYRIGHT: (C)2006,JPO&NCIPI