| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which needs little electric power to work. SOLUTION: In a DRAM, upper addresses are allocated to ways W0 and W1 and lower addresses are allocated to word lines WL belonging to the way W0 and way W1 respectively . The start of self-refresh is detected by a self-refresh start trigger generation circuit 1 and a change of the upper addresses is detected by a refresh address change detection circuit 2. Way selection signals RX0 and RX1 are not reset and are held at the activation level while the certain ways W0 and W1 are selected based on the result of the detection. Accordingly, the electric power consumption is reduced as compared to heretofore when the signals RX0 and RX1 are reset every time one word line WL is selected. COPYRIGHT: (C)2006,JPO&NCIPI
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