发明名称 SUPPORT FOR HEAT TREATMENT OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a support for heat treatment of a semiconductor wafer ensuring high temperature heat treatment while eliminating slip due to thermal deformation of the support. SOLUTION: The support for heat treatment of a semiconductor wafer comprises a thin plate of silicon and has a silicon island formed on the contact surface with the semiconductor wafer wherein the silicon island has a width of 50-1,000μm and a depth of 10-50μm. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005327863(A) 申请公布日期 2005.11.24
申请号 JP20040143925 申请日期 2004.05.13
申请人 TOSHIBA CERAMICS CO LTD 发明人 NAGAHATA YUKIO;SHIMOMURA KOTA;SASAKI TOSHIMI
分类号 H01L21/683;H01L21/22;H01L21/31;H01L21/324;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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