发明名称 |
SUPPORT FOR HEAT TREATMENT OF SEMICONDUCTOR WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide a support for heat treatment of a semiconductor wafer ensuring high temperature heat treatment while eliminating slip due to thermal deformation of the support. SOLUTION: The support for heat treatment of a semiconductor wafer comprises a thin plate of silicon and has a silicon island formed on the contact surface with the semiconductor wafer wherein the silicon island has a width of 50-1,000μm and a depth of 10-50μm. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005327863(A) |
申请公布日期 |
2005.11.24 |
申请号 |
JP20040143925 |
申请日期 |
2004.05.13 |
申请人 |
TOSHIBA CERAMICS CO LTD |
发明人 |
NAGAHATA YUKIO;SHIMOMURA KOTA;SASAKI TOSHIMI |
分类号 |
H01L21/683;H01L21/22;H01L21/31;H01L21/324;H01L21/68;(IPC1-7):H01L21/68 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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