| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element excellent in photoelectric conversion efficiency and high durability, avoiding resistance loss and degradation of the photoelectric conversion efficiency, and free from the problem of reverse electron transfer reaction. <P>SOLUTION: The photoelectric conversion element 1 is provided with: a semiconductor electrode 11 with a semiconductor fine particle layer 4 formed; an opposing electrode 12; and an electrolyte layer 5 pinched by the both electrodes, on a transparent conductive substrate 10 made of a transparent substrate 2 fitted with a conductive wiring layer 3 and a metal oxide layer 3. The transparent conductive substrate 10 has a groove 3h fitted to one face of the transparent substrate 2, and inside the groove 3h, the conductive wiring layer 3 is embedded. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
