发明名称 |
Methods of patterning photoresist |
摘要 |
Methods of patterning photoresist are disclosed. One example method includes forming photoresist on a substrate having a lower layer; performing a first exposure process to the photoresist in state of positioning a mask on the photoresist; performing a first development process to the photoresist; performing a second entire-surface exposure process to the photoresist; and performing a second development process to the photoresist.
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申请公布号 |
US2005260527(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20050133617 |
申请日期 |
2005.05.20 |
申请人 |
LEE IL H |
发明人 |
LEE IL H. |
分类号 |
G03C1/492;G03F7/20;G03F7/40;H01L21/027;H01L21/469;(IPC1-7):G03C1/492 |
主分类号 |
G03C1/492 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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