发明名称 Methods of patterning photoresist
摘要 Methods of patterning photoresist are disclosed. One example method includes forming photoresist on a substrate having a lower layer; performing a first exposure process to the photoresist in state of positioning a mask on the photoresist; performing a first development process to the photoresist; performing a second entire-surface exposure process to the photoresist; and performing a second development process to the photoresist.
申请公布号 US2005260527(A1) 申请公布日期 2005.11.24
申请号 US20050133617 申请日期 2005.05.20
申请人 LEE IL H 发明人 LEE IL H.
分类号 G03C1/492;G03F7/20;G03F7/40;H01L21/027;H01L21/469;(IPC1-7):G03C1/492 主分类号 G03C1/492
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