发明名称 |
Apparatus for pulling a single crystal |
摘要 |
An apparatus for pulling the single crystal has a radiation shield. The apparatus can improve the ratio of single crystallization, even if the radiation shield is made of graphite base material and covered with silicon carbide. The apparatus can be manufactured by low cost and can improve heat insulating characteristic. The apparatus does not generate cracks by heat stress even in a large size. In the apparatus for Czochralski method having the radiation shield, the radiation shield is formed of graphite base material covered with silicon carbide. An inside corner of a curvature formed on the base material is formed of a curved surface.
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申请公布号 |
US2005257736(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20030633487 |
申请日期 |
2003.08.04 |
申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
SHIMOSAKA MAKOTO;ABE SUNAO |
分类号 |
C30B15/00;C30B15/14;(IPC1-7):C30B35/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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