发明名称 Heat sinking structure of power semiconductor
摘要 The heat sinking structure of the present invention is fixedly provided on the surface of a crystal layer of a semiconductor with a heat conducting plate made of copper, the heat conducting plate has therein a plurality of channels parallel to the surface of the crystal layer, the channels extend through the heat conducting plate to form passageways for guiding air flow to exhaust, and to speed up the heat exchanging of the heat conducting plate with air, so that a heat sinking structure that is structurally firm, small by volume and high in efficiency of heat sinking as well as easy for processing in manufacturing is obtained.
申请公布号 US2005259400(A1) 申请公布日期 2005.11.24
申请号 US20040851055 申请日期 2004.05.24
申请人 FORMOSA MICROSEMI CO., LTD. 发明人 HUANG WEN-PING
分类号 H01L23/367;H01L23/495;H05K7/20;(IPC1-7):H05K7/20 主分类号 H01L23/367
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