CYCLIC PULSED TWO-LEVEL PLASMA ATOMIC LAYER DEPOSITION APPARATUS AND METHOD

摘要

Provided is a n apparatus for depositing a cyclic pulsed two-level plasma atomic layer to deposit a thin film on a substrate, which includes a substrate support plate loading and supporting the substrate, a reaction chamber including the substrate support plate and providing reaction space, a process gas supply and control unit supplying process gas such as source gas, reaction gas, and purge gas to the reaction chamber, a source gas supply pipe supplying the source gas from the process gas supply and control unit to the reaction chamber, a reaction gas activation unit activating the reaction gas, a reaction gas supply pipe through which the reaction gas is supplied from the process gas supply and control unit to the reaction chamber via the reaction gas activation unit, a variable RF power supply unit having a function of generating plasma having at least two-level energy intensity in the reaction chamber, and an exhaust unit purging the process gas in the reaction chamber.