发明名称 PLASMA CVD DEPOSITION APPARATUS AND METHOD FOR PRODUCING PLASTIC CONTAINER COATED WITH CVD FILM
摘要 <P>PROBLEM TO BE SOLVED: To produce a vessel having gas barrier properties of constantly higher quality than a certain level, even while an apparatus is continuously operated for a long period of time, by preventing non-ignition of plasma from occurring even when an automatic matching device causes a matching failure originating from an unexpected variation of impedance due to the exfoliation of a carbon-based contamination depositing on the apparatus. <P>SOLUTION: A plasma CVD deposition apparatus for forming a CVD film on at least one surface of the inside and the outside of the vessel has a vacuum chamber having a space for accommodating the plastic vessel therein; and has at least a source-gas-supplying means for supplying a source gas, a plasma-generating-means for converting the source gas into plasma and a means for discharging the source gas, in at least one of the inner space or the outer space of the vessel arranged in the accommodating space; wherein a discharging path for communicating the accommodating space with the discharging means has a spark-generating means therein. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005325395(A) 申请公布日期 2005.11.24
申请号 JP20040143363 申请日期 2004.05.13
申请人 UTEC:KK;MITSUBISHI SHOJI PLAST KK 发明人 HONDA YUJI;KAWABE TAKEHARU;TAKAHASHI HIDEAKI
分类号 H05H1/46;B65D1/40;B65D23/02;B65D23/08;B65D25/34;C23C16/509;C23C16/511 主分类号 H05H1/46
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