| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can obtain a high performance thin film transistor having a larger channel width than the diameter of a silicon crystal particle. SOLUTION: This method comprises a start point part forming step of forming a start point part (125) to be a start point when a semiconductor film is crystallized on a substrate (11); a semiconductor film forming step of forming the semiconductor film on the substrate formed with the start point part; a heat treating step of applying heat treatment to form a substantially monocrystalline particle almost around the start point part (125); a patterning step of patterning the semiconductor film to form a transistor area (133) to be a source area, a drain area, and a channel forming area; and an element forming step of forming a gate insulating film (14) and a gate electrode (15) on the transistor area to form the thin film transistor. In the element forming step, the gate electrode (15) is formed on the substantially monocrystalline particle so as to surround the start point part. COPYRIGHT: (C)2006,JPO&NCIPI |
