| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering apparatus which increases treatment efficiency in a sputtering step by decreasing cleaning frequency through reducing a deposit in a chamber, even when sputtering a target made of Ta or Si. SOLUTION: The sputtering apparatus comprises: a chamber 5 for sputtering the target therein; and a gas bomb 13, a gas bomb 15, a high-frequency power source 11, and vacuum pumps 17 and 19, all of which are used for nitriding the surface of the target 7 that has been used for sputtering in the chamber 5, after the end of the previous sputtering treatment, when a chamber 5 is opened to the atmosphere. COPYRIGHT: (C)2006,JPO&NCIPI
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