发明名称 |
Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same |
摘要 |
The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.
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申请公布号 |
US2005260803(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20050134512 |
申请日期 |
2005.05.23 |
申请人 |
HALIK MARCUS;KLAUK HAGEN;ZSCHIESCHANG UTE;SCHMID GUNTER |
发明人 |
HALIK MARCUS;KLAUK HAGEN;ZSCHIESCHANG UTE;SCHMID GUNTER |
分类号 |
H01L21/283;H01L21/336;H01L21/84;H01L29/49;H01L29/786;H01L51/00;H01L51/05;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/283 |
代理机构 |
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地址 |
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