发明名称 |
Reverse conducting semiconductor device and a fabrication method thereof |
摘要 |
To provide a reverse conducting semiconductor device in which an insulated gate bipolar transistor and a free wheeling diode excellent in recovery characteristic are monolithically formed on a substrate, the free wheeling diode including; a second conductive type base layer to constitute the insulated gate bipolar transistor; a first conductive type base layer for constituting the insulated gate bipolar transistor, an anode electrode which is an emitter electrode covering a first conductive type emitter layer and the second conductive type base layer, a cathode electrode which is a collector electrode covering the first conductive type base layer and a second conductive type collector layer formed on the part of the first conductive type base layer, wherein a short lifetime region is formed on a part of the first conductive type base layer.
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申请公布号 |
US2005258493(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20050076872 |
申请日期 |
2005.03.11 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
AONO SHINJI;YAMAMOTO AYA;TAKAHASHI HIDEKI;YAMAMOTO KENZO;YAMAMOTO IKUKO |
分类号 |
H01L29/06;H01L21/322;H01L21/331;H01L21/336;H01L21/8234;H01L27/04;H01L27/06;H01L27/088;H01L29/08;H01L29/739;H01L29/76;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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