发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME |
摘要 |
In one embodiment, semiconductor device 10 comprises a diode which uses isolation regions (34, 16, and 13) and a plurality of dopant concentrations (30, 20, 24, and 26) which may be used to limit the parasitic current that is injected into the semiconductor substrate (12). Various biases on the isolation regions (34, 16, and 13) may be used to affect the behavior of semiconductor device (10). In addition, a conductive layer (28) may be formed overlying the junction between anode (42) and cathode (40). This conductive layer (28) may decrease the electric field in selected regions in order to increase the maximum voltage that may be applied to cathode (40). |
申请公布号 |
WO2005111817(A2) |
申请公布日期 |
2005.11.24 |
申请号 |
WO2005US11276 |
申请日期 |
2005.04.06 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;ZHU, RONGHUA;BOSE, AMITAVA;KHEMKA, VISHNU K.;PARTHASARATHY, VIJAY |
发明人 |
ZHU, RONGHUA;BOSE, AMITAVA;KHEMKA, VISHNU K.;PARTHASARATHY, VIJAY |
分类号 |
G06F13/00;H01L21/20;H01L29/739;H01L29/861 |
主分类号 |
G06F13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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