Synchronous dynamic random access memory device signals generation of new refresh row when refresh operations are addressed to current refresh row in each memory cell array bank

摘要

A refresh address generator specifies the current refresh row to all the memory cell array banks, each having a bank address. A bank address circuit receives an external bank address for refreshing the current row of the memory cell array bank corresponding to the bank address. A counter signals the generator to generate new refresh row, when refresh operations are addressed to current refresh row in each array bank. Independent claims are also included for the following: (1) memory system; and (2) method of operating synchronous dynamic RAM device.