发明名称 |
AN IMPROVED METHOD FOR FABRICATING AN ULTRALOW DIELECTRIC CONSTANT MATERIAL AS AN INTRALEVEL OR INTERLEVEL DIELECTRIC IN A SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE MADE |
摘要 |
<p>A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.</p> |
申请公布号 |
WO2005112095(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
WO2005US09820 |
申请日期 |
2005.03.23 |
申请人 |
US;US;US;US;US;US;US;US |
发明人 |
GATES, STEPHEN M.;GRILL, ALFRED;MEDEIROS, DAVID R.;NEUMAYER, DEBORAH;NGUYEN, SON VAN;PATEL, VISHNUBHAI V.;WANG, XINHUI |
分类号 |
C23C16/40;H01L21/312;H01L21/316;(IPC1-7):H01L21/312 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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