| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode which suppresses an exfoliation of the Schottky barrier diode and enhances a characteristic as a diode. SOLUTION: An n-type silicon carbide board 1 has one main surface on which an n-type SiC layer 2 having a relatively low dopant concentration is formed. A Schottky barrier metal 3 as an anode electrode is formed so as to join to the entire face of the SiC layer 2. An n-type SiC layer 4 having a relatively high dopant concentration as a buffer film is formed so as to coat the entire face of the Schottky barrier metal 3. A connecting metal film 5 is formed so as to coat the entire face of the SiC layer 4. A solder 7 is formed so as to coat the entire face of the connecting metal film 5. The solder 7 is connected to a metal board wiring 8. On the other main surface of the silicon carbide board 1, a metal electrode 9 as a cathode electrode is formed. COPYRIGHT: (C)2006,JPO&NCIPI |
