| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device in which data stored in a memory cell array are compared with test data stored in the memory device or inverted data of the test data to detect defect of the memory device and to provide a parallel bit test method of the memory device. SOLUTION: The memory device includes a memory cell array, a test data storage section and a decision section. The decision section determines whether the data in the memory cell array are the same as the test data and the inverted data of the test data or not. The parallel bit test method includes a step in which the test data are stored in the test data storage section, a step in which the test data and the inverted data of the test data are written in the memory cell array and a step in which decision is made to determine whether the data read from the memory cell array are the same as the test data and their inverted data or not. Therefore, defect of the memory device is efficiently detected for various test data. COPYRIGHT: (C)2006,JPO&NCIPI
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