发明名称 |
BIMETAL LAYER MANUFACTURING METHOD |
摘要 |
A bimetal layer manufacturing method includes the procedure of: forming a first dielectric layer on the surface of a semiconductor substrate which has a first metal layer (conductive layer) of a selected pattern formed thereon; forming a SOG layer on the surface of the first dielectric layer; forming a second dielectric layer; forming required via holes on the foregoing layers until reaching the first metal layer; forming a linear layer from a dielectrics material through PECVD; removing unnecessary linear layer from selected locations through an anisotropic plasma etching process; finally forming a second metal layer on a selected surface of the linear layer where MIM capacitors to be formed, and forming connection plugs in the via openings without generating via hole poison.
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申请公布号 |
US2005260852(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20040851177 |
申请日期 |
2004.05.24 |
申请人 |
IP HIU F;MA ELLICK;YU YAN L;REN CHONG;SUN JI-WEI |
发明人 |
IP HIU F.;MA ELLICK;YU YAN L.;REN CHONG;SUN JI-WEI |
分类号 |
H01L21/02;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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