| 摘要 |
Aluminum nitride arc discharge vessels having a high total transmittance may be made by annealing the as-sintered AlN vessel in a nitrogen atmosphere, preferably at a temperature of at least about 1850° C. and for a time of at least about 50 hours. The annealing increases the total transmittance of the vessel to greater than 92% in the wavelength region from about 400 nm to about 700 nm. The annealed AlN discharge vessels are useful for lamp applications, such as metal halide lamps, and offer an improved durability and life over polycrystalline alumina (PCA).
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