Thin film transistor substrate and fabrication method thereof

摘要

The present invention provides a TFT substrate that includes a plurality of TFTs each of which have a gate, a source and a drain. The plurality of the TFTs may be formed by first and second active regions formed on the substrate that each have a source region that corresponds to a source and a drain region that corresponds to a drain. An offset region may be formed between the first and second active regions. A single contact hole may reach both the offset region and the adjacent source/drain regions of the first and second active regions.