发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device and a method for manufacturing the same is disclosed, in which a spacer containing nitrogen therein has a tensile stress and enables device reliability improvement by improving the On-current without regard to the kind of transistor. The semiconductor device includes a semiconductor substrate; a gate insulating layer and a gate electrode on the semiconductor substrate; spacers at sidewalls of the gate electrode, wherein the spacer contains nitrogen to obtain or increase its tensile stress; and source and drain regions in the semiconductor substrate adjacent to the gate electrode.
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申请公布号 |
US2005260817(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20050121499 |
申请日期 |
2005.05.03 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
KIM JEA H. |
分类号 |
H01L21/336;H01L29/49;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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