| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a boosting voltage generating circuit for use in a memory device by which program efficiency is improved and memory cell stress is reduced. <P>SOLUTION: The circuit includes a level detector that receives a plurality of programming input signals, detects which of the programming input signals are active, and outputs detected signals of varying weight depending upon the number of programming input signals which are active, a signal generator that receives the detected signals from the level detector and outputs a generated signal having a varying voltage level proportional to the varying weight of the detected signals, and a voltage booster that controls a voltage level of a bias source based on the generated signal. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
