| 发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
There is here disclosed a semiconductor device manufacturing method comprising a step of forming an island region including a monocrystalline Si<SUB>1-x-y</SUB>Ge<SUB>x</SUB>C<SUB>y </SUB>layer (1>x>0, 1>y>=0) and a peripheral region including an amorphous or polycrystalline Si<SUB>1-x-y</SUB>Ge<SUB>x</SUB>C<SUB>y </SUB>layer which surrounds the island region on a monocrystalline Si layer on an insulating film, a step of subjecting the respective Si<SUB>1-x-y</SUB>Ge<SUB>x</SUB>C<SUB>y </SUB>layers to heat treatment, and after the heat treatment and the removal of a surface oxide film, a step of forming a monocrystalline Si<SUB>1-z-w</SUB>Ge<SUB>z</SUB>C<SUB>w </SUB>layer (1>z>=0, 1>w>=0) which becomes an element formation region on the island region.
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| 申请公布号 |
US2005260809(A1) |
申请公布日期 |
2005.11.24 |
| 申请号 |
US20030628513 |
申请日期 |
2003.07.29 |
| 申请人 |
TEZUKA TSUTOMU;TAKAGI SHINICHI |
发明人 |
TEZUKA TSUTOMU;TAKAGI SHINICHI |
| 分类号 |
H01L27/08;H01L21/20;H01L21/31;H01L21/336;H01L21/8228;H01L21/8238;H01L21/84;H01L27/092;H01L29/786;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/08 |
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