Production process for a semiconductor structure in shallow trench isolation forms oxide layer between trench and spin on glass filling and thermally cures

摘要

A production process for a semiconductor structure comprises preparing a silicon semiconductor substrate (1) with a trench (2), filling the trench with spin-on-glass (4) there being an oxide layer (6) between substrate and spin-on-glass and performing a thermal curing step to cure and densify the spin-on-glass.