Metal pattern formation n semiconductor device manufacture, involves forming damascene trench having inclined bottom profile for exposing side wall of interconnection contact

摘要

The upper insulating layers (610,630) cover an interconnection contact (550) passing through the lower insulating layers (410,430,450) on a substrate (100). A groove of same width as a damascene trench is formed on the upper insulating layers. The trench having inclined bottom profile for exposing side wall of the contact is formed after forming a mask spacer. A metal pattern filled in the trench, is connected with the contact.