INTEGRATED SEMICONDUCTOR LASER DEVICE, MANUFACTURING METHOD THEREOF, INTEGRATED SEMICONDUCTOR LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, OPTICAL PICK-UP DEVICE AND OPTICAL DISC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an integrated semiconductor laser device capable of sufficiently approximating the luminescence point of a GaN system semiconductor laser to the luminescence point of an AlGaInP system semiconductor laser for DVD.

SOLUTION: The integrated semiconductor laser device is provided with a semiconductor laser LD1 having a semiconductor layer on a first conductive substrate 11 and provided with the light emitting wavelength of λ1; a semiconductor laser LD2 having a semiconductor layer on a second conductive substrate 13 and provided with the light emitting wavelength of λ2; and a semiconductor laser LD3 having a semiconductor layer on a third conductive substrate 13, provided with a semiconductor laser LD3, and provided with the light emitting wavelength of λ3(λ1<λ2<λ3). In such an integration type semiconductor laser device, the first conductive substrate 11 side of the semiconductor laser LD1 is bonded onto a supporting substrate 10, while the semiconductor layer side of the semiconductor laser LD2 and the semiconductor layer side of the semiconductor laser LD3 are bonded onto the semiconductor layer of the semiconductor laser LD1. An interval between the luminescence point P1of the semiconductor laser LD1 and the luminescence point P2of the semiconductor laser LD2 is specified so as to be less than 10μm.

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