| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal material usable as a dielectric material for an electronic device having a high Qf value and its manufacturing method. SOLUTION: The single crystal of a complex oxide is easily obtained from a composition where a small amount of SrTiO<SB>3</SB>is added to LaAlO<SB>3</SB>by an FZ method or a CZ method. The single crystal material having a specific composition denoted as (1-X)LaAlO<SB>3</SB>-XSrTiO<SB>3</SB>has dielectric properties that the dielectric constant is 24 or more and the Qf value is 300,000 GHz or higher. The single crystal material can be applied to a high temperature superconducting filter as the dielectric material whose Qf value is drastically enhanced at a high frequency band with a quasi-millimeter wave or higher. COPYRIGHT: (C)2006,JPO&NCIPI
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