发明名称 |
Nonvolatile memory cells having high control gate coupling ratios using grooved floating gates and methods of forming same |
摘要 |
A non-volatile memory cell includes a semiconductor substrate having a fin-shaped active region extending therefrom. A tunnel dielectric layer is provided, which extends on opposing sidewalls and an upper surface of the fin-shaped active region. A floating gate electrode is provided on the tunnel dielectric layer. This floating gate electrode has at least a partial groove therein. An inter-gate dielectric layer is also provided. This inter-gate dielectric layer extends on the floating gate electrode and into the at least a partial groove. A control gate electrode is provided, which extends on the inter-gate dielectric layer and into the at least a partial groove.
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申请公布号 |
US2005260814(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20050121887 |
申请日期 |
2005.05.04 |
申请人 |
CHO EUN-SUK;LEE CHOONG-HO;KIM TAE-YONG |
发明人 |
CHO EUN-SUK;LEE CHOONG-HO;KIM TAE-YONG |
分类号 |
H01L21/28;H01L21/3205;H01L21/336;H01L29/423;H01L29/786;H01L29/788;(IPC1-7):H01L21/336;H01L21/320 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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