| 发明名称 |
Gate driver output stage with bias circuit for high and wide operating voltage range |
| 摘要 |
A simple, low cost, gate driver and bias circuit provides for a wider operating voltage range exceeding the normal component breakdown voltage of components such as NMOS and PMOS transistors. A CMOS process with an epitaxial layer as bulk and p-type substrate is used to implement the circuit in this example.
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| 申请公布号 |
US2005258495(A1) |
申请公布日期 |
2005.11.24 |
| 申请号 |
US20050130370 |
申请日期 |
2005.05.16 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
JEONG JONG-DEOG |
| 分类号 |
H01L21/761;H01L27/092;H01L31/113;H03K19/003;(IPC1-7):H01L31/113 |
主分类号 |
H01L21/761 |
| 代理机构 |
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