CARBON-DOPED-Si OXIDE ETCH USING H2 ADDITIVE IN FLUOROCARBON ETCH CHEMISTRY

摘要

Certain embodiments include an etching method (200 and 1600) including providing an etch material (210), applying a gas mixture including hydrogen (230) forming a plasma (240), and etching the etch material (250). The etch material can include a low-k dielectric material. The gas mixture can include a hydrogen gas, a hydrogen-free fluorocarbon, and a nitrogen gas, and further include one or more of a hydrofluorocarbon gas, an inert gas, and/or a carbon monoxide gas. The hydrogen gas can be a diatomic hydrogen, a hydrocarbon, a silane and/or a fluorine-free hydrogen gas, including H2, CH4, C2H4, NH3, and/or H20 gases. The hydrogen­-free fluorocarbon gas can be a CXFY gas (where x>=1 and Y>=1) and the hydrofluorocarbon gas can be a CXHYFZ gas (where x>=1, y>=1 and z>=l). The gas mixture can be free of oxygen. Embodiments can include reduced pressures, reduced hydrogen flow rates and one or more plasma frequencies.