| 摘要 |
<p>A dielectric ceramic composition which can be sintered at such a temperature of about 800 to 1000 DEG C as to permit incorporation of and multilayer formation with a low resistant conductor such as Ag or Cu by the simultaneous sintering with the low resistant conductor, which is sintered to form dielectric ceramics having a dielectric constant epsilon r of not more than 10, and a resonator having a large Q x f0 value and an absolute value in temperature coefficient tau f of resonance frequency f0 of not more than 20 ppm/ DEG C, the value being easy to be controlled. The dielectric ceramic composition contains a glass component in an amount of 5 to 150 parts by weight based on 100 parts by weight of a main component represented by general formula: aZnAl2O4-bZn2SiO4-cTiO2-dZn2TiO4, in which the molar fractions of respective components a, b, c, and d satisfy 5.0 </= a </= 80.0 mol%, 5.0 </= b </= 70.0 mol%, 5.0 </= c </= 27.5 mol%, 0 </= d </= 30.0 mol% (a + b + c + d = 100 mol%). <IMAGE></p> |
