| 摘要 |
An organic FET (1) is disclosed which comprises a gate insulating film (41) and a functional layer (43) sequentially formed on a substrate (2) in this order, a source electrode (6) and a drain electrode (8) formed on the functional layer (43) at a certain distance from each other, and an organic semiconductor layer (10) formed on top of and between the electrodes (6, 8). The functional layer (43) so arranged to be in contact with the organic semiconductor layer (10) is composed of a matrix polymer such as PMMA in which an electron- accepting substance such as p-bromanil is contained.
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