发明名称 PROCESS FOR THE MANUFACTURE OF A SPUTTERING TARGET
摘要 <p>A process for the manufacture of sputtering target comprises the steps of i) providing a substrate; ii) plasma melting of a material selected to form the sputtering target, yielding droplets of molten material; and iii) deposition of the droplets onto the substrate, yielding a sputtering target comprised of the coated layer of the material on the substrate. In some application, it might be preferable that the substrate be a temporary substrate and iv) to join the coated temporary target via its coated layer to a permanent target backing material; and v) to remove the temporary substrate, yielding a sputtering target comprised of the coated layer of the material on the permanent target backing material. The plasma deposition step is carried out at atmospheric pressure or under soft vacuum conditions using, for example, d.c. plasma spraying, d.c. transferred arc deposition or induction plasma spraying. The process is simple and does not require subsequent operation on the resulting target.</p>
申请公布号 EP1597407(A1) 申请公布日期 2005.11.23
申请号 EP20040713497 申请日期 2004.02.23
申请人 TEKNA PLASMA SYSTEMS INC. 发明人 BOULOS, MAHER, I.;JUREWICZ, JERZY, W.
分类号 C23C4/12;C23C4/18;C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C4/12
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