发明名称 INTEGRATED WAVELENGTH TUNABLE SINGLE AND TWO-STAGE ALL-OPTICAL WAVELENGTH CONVERTER
摘要 A semiconductor tunable laser (10) and an interferometer (12) coupled to the tunable laser (10) are monolithically fabricated in a semiconductor heterostructure. The laser also comprises a buried ridge stripe waveguide laser. The interferometer (12) has a semiconductor optical amplifier (38) coupled in each arm. A cross-gain semiconductor optical amplifier converter is coupled to the interferometer (12). The semiconductor optical amplifier (38) coupled in each arm is biased so that an optical path length difference between the two arms is in antiphase which results in destructive interference. The output of the tunable laser (10) is coupled to a coupler. A semiconductor optical amplifier (38) is used as a gain controller for the semiconductor optical amplifiers in the interferometer (12) to allow wavelength conversion over a larger range of input signal powers. The heterostructure substrate comprises a low bandgap waveguide layer and thinner multi-quantum well active regions disposed above the low bandgap waveguide layer. The heterostructure substrate has nonabsorbing passive elements formed therein by selectively removing the quantum wells regions above the waveguide layer to allow formation of active and passive sections in the waveguide layer without having to perform a butt joint regrowth. The invention is also characterized as a method of fabricating an integrated optical device as disclosed above in the heterostructure substrate.
申请公布号 EP1218988(A4) 申请公布日期 2005.11.23
申请号 EP20000967013 申请日期 2000.09.28
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 MASON, THOMAS, GORDON, BECK;FISH, GREGORY, A.;BLUMENTHAL, DANIEL, J.
分类号 G02F2/02;G02F2/00;H01S5/00;H01S5/026;H01S5/042;H01S5/062;H01S5/0625;H01S5/125;H01S5/227;H01S5/34;H01S5/50;H04B10/145 主分类号 G02F2/02
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